Wet oxidation growth of hafnium doped tantalum oxide films with different composition deposited on silicon substrate
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DOI: 10.1016/j.apsusc.2020.146722
Abstract: Abstract As-deposited Ta-HfO2 films produced via co-sputtering using different Ta sputtering powers (120, 150, and 180 W) with a fixed HfO2 power (160 W) were transformed to ternary HfxTayOz films after wet oxidation at 800 °C. An increase… read more here.
Keywords: oxidation; wet oxidation; growth hafnium; film ... See more keywords