Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms.
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DOI: 10.1002/smll.201603775
Abstract: The effects of the growth parameters on the uniformity and the aspect ratio of InN nanowires grown on Si(111) substrates have been studied systematically, and a modified quasi-equilibrium model is proposed. The growth temperature is… read more here.
Keywords: growth inn; inn nanowires; nanowires uniform; growth ... See more keywords
Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
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DOI: 10.1016/j.jcrysgro.2017.05.021
Abstract: Abstract We have fabricated self-assembled InN dots on GaN using 4H-SiC(0001) vicinal substrates (4° off toward [11–20]). The size and density of InN dots were well controlled by changing the deposition amount and the growth… read more here.
Keywords: sic 0001; growth inn; 0001 vicinal; inn dots ... See more keywords