Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.05.035
Abstract: Abstract Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures… read more here.
Keywords: growth interruption; thermal etching; growth; etching rate ... See more keywords
Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2017.06.030
Abstract: Abstract This study investigates the optical and structural properties of multilayer InAs QDs heterostructures designed with varying levels of growth interruption. Samples were subject to growth interruptions of 0, 25, 50, and 75 s (samples A,… read more here.
Keywords: mev; inas qds; growth interruption; growth ... See more keywords
Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption
Sign Up to like & getrecommendations! Published in 2021 at "Micromachines"
DOI: 10.3390/mi12040399
Abstract: We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan… read more here.
Keywords: growth interruption; layer; nh3 growth; gan based ... See more keywords