Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure
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DOI: 10.1134/s1063782617100189
Abstract: The growth of Ge nanocrystals in SiO2 films is studied in relation to the dose of implanted Ge+ ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences… read more here.
Keywords: growth nanocrystals; diffusion; nanocrystals sio2; sio2 films ... See more keywords