Molecular dynamics simulation of interfacial growth of SiC from Si–C solution on different growth planes
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.05.003
Abstract: Abstract A critical issue in solution growth of 4H–SiC crystal is to control the morphology at the growth interface. We conducted a molecular dynamics simulation of interfacial growth of SiC from Si–C solution to understand… read more here.
Keywords: molecular dynamics; dynamics simulation; growth planes; solution ... See more keywords