Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method
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DOI: 10.1016/j.jcrysgro.2019.03.009
Abstract: Abstract A contactless, non-destructive approach to measure the geometrical parameters of the growth ridge, based on surface topography, is presented and established. It allows a systematic, large scale analysis of growth ridges of single crystals… read more here.
Keywords: growth; geometry; gradient growth; growth ridges ... See more keywords