Molecular dynamics simulation of interfacial growth of SiC from Si–C solution on different growth planes
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.05.003
Abstract: Abstract A critical issue in solution growth of 4H–SiC crystal is to control the morphology at the growth interface. We conducted a molecular dynamics simulation of interfacial growth of SiC from Si–C solution to understand… read more here.
Keywords: molecular dynamics; dynamics simulation; growth planes; solution ... See more keywords
Availability of Cr-rich Cr-Si solvent for rapid solution growth of 4H-SiC
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125877
Abstract: Abstract In this study, we verified the potential of Cr-rich Cr-Si solvent for the rapid solution growth of 4H-SiC using three different compositional alloys to introduce a perspective of the solvent design for SiC crystal… read more here.
Keywords: rapid solution; growth sic; rich solvent; solvent rapid ... See more keywords