Numerical modeling study on the epitaxial growth of silicon from dichlorosilane
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.11.009
Abstract: Abstract Computer simulations play an important role in determining the optimal design parameters for chemical vapor deposition (CVD) reactors, such as flow rates, positions of the inlet and outlet orifices, and rotational rates, etc. Reliability… read more here.
Keywords: epitaxial growth; silicon dichlorosilane; growth silicon; silicon ... See more keywords
Controlled Growth of Silicon Dioxide Nanospheres by Regulation in the Addition Rate of the Precursor
Sign Up to like & getrecommendations! Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619012649
Abstract: A silicon dioxide nanospheres suspension can simulate the optical properties of biological tissues [1-3], allowing to compare the Mie solutions to Maxwell equations for dielectric spheres with the diffusion approximation for the radiative transport equation.… read more here.
Keywords: controlled growth; growth silicon; silicon dioxide; dioxide nanospheres ... See more keywords
Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes
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DOI: 10.3390/ma15051843
Abstract: Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs… read more here.
Keywords: czochralski directional; growth silicon; crystal growth; growth ... See more keywords