Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-7294-7
Abstract: Hexagonal boron nitride (hBN) films were directly grown on c-plane Al2O3 substrates by low pressure thermal chemical vapor deposition (CVD) with single precursor i.e. borazane (NH3-BH3) without employing any extra catalysis. The growth temperature influence… read more here.
Keywords: growth temperature; film; cvd; borazane ... See more keywords
Influence of the growth temperature on the spectral dependence of the optical functions associated with thin silicon films grown by ultra-high-vacuum evaporation on optical quality fused quartz substrates
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-03870-1
Abstract: Following up on some recent work that has been presented (Orapunt et al., J Appl Phys 119:065702-1-12, 2016), we report on the optical properties associated with a unique form of thin-film silicon that has been… read more here.
Keywords: spectral dependence; growth temperature; growth; silicon ... See more keywords
Determination of poisson’s ratio using growth temperature variations of InGaN/GaN MQW
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04055-6
Abstract: In this study, InGaN/GaN/Al 2 O 3 multi-quantum well (MQW) structure is investigated in 300–450 °C growth temperature range with steps of 50 °C. By the help of lattice constants at four different growth temperatures… read more here.
Keywords: poisson ratio; growth temperature; growth; ingan gan ... See more keywords
Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07111-y
Abstract: The morphology of GaN crystals grown in a temperature range of 800–860°C by the Na flux liquid phase epitaxial (LPE) method was observed by the optical microscope and the scanning electron microscope (SEM). Significant changes… read more here.
Keywords: morphology gan; temperature; growth temperature; gan crystals ... See more keywords
Evolution of amorphous carbon films into nano-crystalline graphite with increasing growth temperature in plasma-enhanced chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2021 at "Current Applied Physics"
DOI: 10.1016/j.cap.2020.12.012
Abstract: Abstract Amorphous carbon films (ACFs) have recently emerged as one of the best candidates for etching-resistant hardmask materials in advanced semiconductor manufacturing processes. Etching resistivity of ACFs is known to be improved by controlling the… read more here.
Keywords: growth temperature; spectroscopy; carbon films; amorphous carbon ... See more keywords
Research on the defect types transformation induced by growth temperature of vertical graphene nanosheets
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.12.075
Abstract: Abstract The influence factors on the defect types in vertical graphene nanosheets (VGNs) are widely researched while few systematic research has been reported on the growth temperature, which should play an important role in the… read more here.
Keywords: growth temperature; vertical graphene; defect types; graphene nanosheets ... See more keywords
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.061
Abstract: Abstract InGaN/GaN heterostructured samples were grown at different temperatures varying from 680 °C to 760 °C on c -plane sapphire substrates using a horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Systematic investigation of structural, optical,… read more here.
Keywords: temperature; growth temperature; ingan gan; gan heterostructures ... See more keywords
Impact of the growth temperature on the performance of 1.70-eV Al 0.22 Ga 0.78 As solar cells grown by MBE
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.07.011
Abstract: Abstract Growth of high material quality Aluminum Gallium Arsenide (Al x Ga 1-x As) is known to be challenging, in particular with an Al content x above 20%. As a result, the use of Al… read more here.
Keywords: temperature; growth temperature; performance; impact growth ... See more keywords
Growth of millimeter wave AlN/GaN heterostructures by MOCVD
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125265
Abstract: Abstract The influences of growth temperature on crystalline quality and electrical properties of thin barrier AlN/GaN heterostructures were studied by metal organic chemical vapor deposition (MOCVD). It is found that the high growth temperature (≥1100 °C)… read more here.
Keywords: growth temperature; layer; growth; aln gan ... See more keywords
Modulation on the magnetic and electrical properties of Fe3O4 thin films through strain relaxation
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2021.168128
Abstract: Abstract A series of Fe3O4 thin films with growth temperature ranging from 400 to 600 °C are prepared by magnetron sputtering on α-Al2O3 (0 0 0 1). XRD and XPS measurements indicate that all the samples are pure Fe3O4… read more here.
Keywords: growth temperature; fe3o4 thin; magnetic electrical; strain relaxation ... See more keywords
In situ growth of CuSbS2 thin films by reactive co-sputtering for solar cells
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.05.004
Abstract: Abstract CuSbS2 thin films were in situ grown by reactive co-sputtering and the effects of the growth temperature on film composition, structure and morphology were investigated. It is demonstrated that orthorhombic chalcostibite CuSbS2 thin films… read more here.
Keywords: cusbs2; thin films; cusbs2 thin; growth temperature ... See more keywords