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1
Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-017-1125-1
Abstract: A new p-type guard ring by introduction of a thin p-type layer which encloses shallow trench isolation (STI) layer is utilized to reduce radiation induced noise in photodiodes implemented in 0.18 $$\upmu$$μm standard complementary-metal-oxide-semiconductor (CMOS) technology.…
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Keywords:
guard ring;
radiation induced;
photodiodes implemented;
technology ... See more keywords
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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08180-0
Abstract: The guard-ring of a CdZnTe (CZT) detector can reduce surface leakage current and improve charge collection efficiency. In this paper, COMSOL simulation software is adopted to evaluate the influence of the weighting potential and electric…
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Keywords:
guard ring;
czt;
detector guard;
cdznte ... See more keywords
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Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106820
Abstract: Abstract In this study, the effect of p-NiO guard ring length on the properties of vertical GaN Schottky barrier diode was investigated extensively. The forward biased current-voltage characteristics of all diodes with different guard ring…
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Keywords:
gan schottky;
nio guard;
guard ring;
schottky barrier ... See more keywords
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Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2025.3583669
Abstract: Avalanche photodiodes (APDs) based on InGaAs/InP are pivotal for applications in low-light detection, yet their performance is often hindered by edge breakdown and high dark currents. This study systematically optimizes guard ring structures to address…
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Keywords:
ring structures;
dark current;
ingaas inp;
guard ring ... See more keywords
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Published in 2025 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2025.3554315
Abstract: This study explores strategies for safeguarding complementary metal–oxide–semiconductor (CMOS) field-effect-transistors (FETs) and PN-diode against bulk carrier contamination for energy harvesting applications. Energy harvesting processes can generate excessive carriers within the bulk region, which can penetrate…
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Keywords:
designs photovoltaic;
ring designs;
energy harvesting;
cell ... See more keywords
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Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3378222
Abstract: This study aims to investigate the effectiveness of different guard ring (GR) structures in suppressing edge breakdown issues in InGaAs/InP planar avalanche photodiodes (APDs) with a thicker multiplication layer design through highly realistic simulations. Based…
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Keywords:
attached step;
guard ring;
avalanche photodiodes;
edge breakdown ... See more keywords
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Published in 2021 at "Optical Engineering"
DOI: 10.1117/1.oe.60.6.067105
Abstract: Abstract. The use of a physical guard ring in CMOS single-photon avalanche diodes (SPADs) based on n + /(deep)p-well and p + /(deep)n-well structures is a common solution to control the electric field of the SPADs periphery and prevent…
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Keywords:
virtual guard;
guard ring;
fill factor;
cmos single ... See more keywords
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2
Published in 2023 at "Materials"
DOI: 10.3390/ma16041667
Abstract: We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The…
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Keywords:
design;
inp avalanche;
prevent;
guard ring ... See more keywords
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2
Published in 2022 at "Micromachines"
DOI: 10.3390/mi13111811
Abstract: Silicon surface barrier detectors (SSBDs) are normally used to detect high-energy particles due to their excellent properties. For better charge collection efficiency (CCE), the SSBD device should be operated at higher reverse voltages, but this…
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Keywords:
junction guard;
guard;
guard ring;
breakdown voltage ... See more keywords