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1
Published in 2017 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b06094
Abstract: We investigate 29Si nuclear magnetic resonance (NMR) chemical shifts δiso of soda-silica and hafnia-soda-silica glass models by structural modeling and the gauge-invariant projector augmented wave (GIPAW) method within density functional theory (DFT). Models of soda-silica…
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Keywords:
hafnia;
soda silica;
silica glass;
silica ... See more keywords
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1
Published in 2022 at "Nanoscale horizons"
DOI: 10.1039/d1nh00626f
Abstract: Gastrointestinal (GI) tract is one of the hard-to-reach target tissues for the delivery of contrast agents and drugs mediated by nanoparticles due to its harsh environment. Herein, we overcame this barrier by designing orally ingestible…
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Keywords:
hafnia;
contrast agents;
probiotic vectors;
photon counting ... See more keywords
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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5031491
Abstract: Ultra-thin ferroelectric hafnia-based thin films are very promising candidates for nanoscale ferroelectric random access memories. However, dielectric breakdown is a main failure mechanism during repeated polarization switching. Generalizing Lou et al.'s local phase decomposition model,…
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Keywords:
hafnia;
tin;
model;
dielectric breakdown ... See more keywords
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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0029691
Abstract: The wake-up in doped hafnia ferroelectric devices is an extremely important process to understand in order to integrate these materials successfully into working ferroelectric memory devices. The crystallographic origins of this process are clarified with…
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Keywords:
crystallographic origins;
hafnia;
possible crystallographic;
elucidating possible ... See more keywords
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2
Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0146092
Abstract: HfO2-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., Hf1−xZrxO2 (HZO). The extent of Zr substitution can be great, and x is commonly set…
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Keywords:
substitution;
structure;
hafnia;
hfo2 zro2 ... See more keywords
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1
Published in 2022 at "Science Advances"
DOI: 10.1126/sciadv.add5953
Abstract: Hafnia (HfO2) is a promising candidate for next-generation ferroelectric devices due to its robust ferroelectricity at reduced dimensions and its compatibility with silicon technology. Unfortunately, the origin of robust ferroelectricity and the underlying phase transition…
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Keywords:
hafnia;
ferroelectricity;
phase transition;
strain ... See more keywords
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1
Published in 2020 at "Science"
DOI: 10.1126/science.abd1212
Abstract: Dipolar slices explain the origin of ferroelectricity in a material now used for memory devices The ferroelectrics community is witnessing one of those moments in which serendipity changes the course of science. The story of…
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Keywords:
piece ferroelectric;
hafnia;
ferroelectric hafnia;
hfo2 ... See more keywords
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3
Published in 2023 at "Journal of Clinical Microbiology"
DOI: 10.1128/jcm.01326-22
Abstract: A bacterial species is considered to be intrinsically resistant to an antimicrobial when nearly all of the wild-type isolates (i.e., those without acquired resistance) exhibit minimum inhibitory concentration (MIC) values that are sufficiently high such…
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Keywords:
hafnia;
intrinsic resistance;
susceptibility testing;
colistin ... See more keywords
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Published in 2018 at "Mrs Bulletin"
DOI: 10.1557/mrs.2018.92
Abstract: Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in…
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Keywords:
hafnium oxide;
hafnia;
ferroelectric random;
field ... See more keywords