Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors
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DOI: 10.1126/sciadv.adn1345
Abstract: Ferroelectric transistors based on hafnia-based ferroelectrics exhibit tremendous potential as next-generation memories owing to their high-speed operation and low power consumption. Nevertheless, these transistors face limitations in terms of memory window, which directly affects their… read more here.
Keywords: memory; level data; per cell; data per ... See more keywords