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Published in 2017 at "Advanced Engineering Materials"
DOI: 10.1002/adem.201600377
Abstract: Mixtures of hafnia and carbon powders, containing 0.0–10 mol% of silicon, are heated and analyzed by XRD, SEM, TEM, and DTA. Furthermore, hafnia and carbon pellets, with varying degrees of silicon content, are investigated to determine…
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Keywords:
hafnium oxide;
reduction hafnium;
oxide silicon;
enhancement carbothermal ... See more keywords
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Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202106881
Abstract: With highly diverse multifunctional properties, hafnium oxide (HfO2 ) has attracted considerable attention not only because of its potential to address fundamental questions about material behaviors, but also its potential for applied perspectives like ferroelectric…
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Keywords:
hafnium oxide;
memory;
high performing;
pyro photoelectric ... See more keywords
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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202204949
Abstract: Spiking neural network (SNN), where the information is evaluated recurrently through spikes, has manifested significant promises to minimize the energy expenditure in data‐intensive machine learning and artificial intelligence. Among these applications, the artificial neural encoders…
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Keywords:
neural network;
ferroelectric encoder;
based ferroelectric;
hafnium oxide ... See more keywords
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Published in 2022 at "Small"
DOI: 10.1002/smll.202107575
Abstract: Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development…
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Keywords:
oxide hfo2;
hfo2 multifunctional;
memory;
hafnium oxide ... See more keywords
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Published in 2021 at "Analytica chimica acta"
DOI: 10.1016/j.aca.2020.12.040
Abstract: Single-walled carbon nanotube-based field effect transistors (SWCNT-FETs) are ideal candidates for fabricating sensors and have been widely used for chemical sensing applications. SWCNT-FETs have low selectivity because of the environmentally sensitive electronic properties of SWCNTs,…
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Keywords:
hafnium oxide;
layer;
walled carbon;
carbon nanotube ... See more keywords
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Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.149093
Abstract: Abstract The electrochemical fabrication of memristive devices based on Hf is demonstrated. Electrolyte incorporation in memristors is confirmed in oxides grown in 0.1, 0.5 and 1 M phosphate buffers. The impact of phosphate species on conductive…
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Keywords:
incorporation anodic;
hafnium oxide;
incorporation;
anodic hafnium ... See more keywords
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Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c00085
Abstract: Hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) have been extensively evaluated for high-speed and low-power memory applications. Herein, we investigated the influence of Al content in HfAlO thin films on the ferroelectric characteristics of HfAlO-based…
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Keywords:
doping effect;
effect intrinsic;
ferroelectricity;
hafnium oxide ... See more keywords
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Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4989908
Abstract: Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized…
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Keywords:
hafnium oxide;
energy;
silicon doped;
energy storage ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0023554
Abstract: The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials…
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Keywords:
hafnium oxide;
oxygen vacancy;
ferroelectric properties;
lanthanum doped ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab68fb
Abstract: This study investigates the resistive switching (RS) behavior of Ag/HfO2(3-nm-thick)/SiOx(interfacial-layer)/Si devices. The findings are drawn from a systematic electrical and material characterization of the fabricated devices. Based on the current-time(I-t)and current-voltage(I-V)measurements, it is inferred that…
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Keywords:
hafnium oxide;
oxide based;
silver sub;
sub hafnium ... See more keywords
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Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acbcd9
Abstract: In this work, we present the design, atomistic/circuit/electromagnetic simulations, and the experimental results for graphene monolayer/zirconium-doped hafnium oxide (HfZrO) ultra-thin ferroelectric-based field effect transistors fabricated at the wafer scale, regarding the pyroelectricity generation directly from…
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Keywords:
microwave energy;
doped hafnium;
energy;
hafnium oxide ... See more keywords