Incorporation of hafnium and platinum metal in vertical power MOSFETs
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DOI: 10.1007/s10825-018-1193-x
Abstract: A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using the charge plasma concept. Electron and hole… read more here.
Keywords: metal; hafnium platinum; vertical power; platinum metal ... See more keywords