Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole
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DOI: 10.1016/j.mssp.2021.105934
Abstract: Abstract The cutoff frequency of Schottky barrier diode (SBD) depends on its junction capacitance and series resistance. The two-dimensional electron gas (2DEG) at AlGaN/GaN interface has high carrier mobility and carrier concentration. However, AlGaN/GaN heterostructure… read more here.
Keywords: algan gan; half hole; series resistance; channel ... See more keywords