Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2021.126111
Abstract: Abstract The effect of the growth conditions on halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates was investigated. Only the most thermally stable phase c-In2O3 grows at growth temperatures of 400 to 1000… read more here.
Keywords: in2o3; growth; phase epitaxy; halide vapor ... See more keywords
High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5045601
Abstract: Semi-insulating halide vapor phase epitaxial β-Ga2O3 films without intentional dopants introduced during growth are demonstrated. The sheet resistance measured in the 340–480 K range yielded 268–134 kΩ/◻ and an activation energy of 0.81 eV. Room temperature capacitance-voltage measurements… read more here.
Keywords: halide vapor; vapor phase; ga2o3 films; spectroscopy ... See more keywords
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "APL Materials"
DOI: 10.1063/1.5051058
Abstract: We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively on the mask windows. The… read more here.
Keywords: ga2o3; halide vapor; epitaxial lateral; lateral overgrowth ... See more keywords
Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5100246
Abstract: We demonstrate that Pd nanoparticle/single-walled carbon nanotubes (Pd-SWCNTs) can be used to improve the quality of α-Ga2O3 crystals using halide vapor phase epitaxy (HVPE) methods. We employed Pd-SWCNTs as the nanoepitaxial lateral overgrowth (ELOG) mask… read more here.
Keywords: halide vapor; nanoepitaxial lateral; vapor phase; lateral overgrowth ... See more keywords
Influence of Post-Annealing on Properties of α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2.0051907jss
Abstract: Effect of annealing to realize high-quality α-Ga2O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2O3 changed with changing annealing duration. In particular, for an annealing duration… read more here.
Keywords: phase epitaxy; properties ga2o3; halide vapor; grown halide ... See more keywords
Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13071214
Abstract: In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensional hole layers… read more here.
Keywords: orthorhombic ga2o3; halide vapor; ga2o3 films; vapor phase ... See more keywords