Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
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DOI: 10.1016/j.jmmm.2019.165536
Abstract: Abstract We investigated a voltage-control spintronics memory (VoCSM) with a shunt-free design process and W spin-Hall electrode. We successfully reduced the write current to 62 μA at a 5-ns write pulse (48 μA at a 20-ns write… read more here.
Keywords: spin hall; shunt free; design process; hall electrode ... See more keywords