Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices
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DOI: 10.1109/ted.2020.3015718
Abstract: In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the… read more here.
Keywords: devices single; hardening method; single event; mosfet ... See more keywords