$$\hbox {Au}^{2+}$$Au2+-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method
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DOI: 10.1007/s10765-017-2246-2
Abstract: Silicon samples were implanted with $$\hbox {Au}^{2+}$$Au2+ ions of energy 100 keV and doses of $$10^{14}\,\hbox { cm}^{-2}$$1014cm-2. The area of the implanted region was $$2\,\hbox {mm}\times 2\,\hbox {mm}$$2mm×2mm. The size of the Si substrate samples… read more here.
Keywords: absorption; modulated free; hbox au2; free carrier ... See more keywords