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Published in 2017 at "Bulletin of Materials Science"
DOI: 10.1007/s12034-017-1509-7
Abstract: The temperature-dependent current–voltage ($$I\text {--}V$$I--V) and capacitance–voltage ($$C\text {--}V$$C--V) characteristics of the fabricated Al/p-Si Schottky diodes with the polythiopene–SiO$$_{2}$$2 nanocomposite ($$\hbox {PTh--SiO}_{2}$$PTh--SiO2) interlayer were investigated. The ideality factor of $$\hbox {Al}/\hbox {PTh--SiO}_{2}/{p}\text {-Si}$$Al/PTh--SiO2/p-Si Schottky diodes…
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Keywords:
pth;
barrier height;
temperature;
hbox pth ... See more keywords