Temperature dependence of electrical properties in $$\hbox {In/Cu}_{{2}}\hbox {ZnSnTe}_{{4}}\hbox {/Si/Ag diodes}$$In/Cu2ZnSnTe4/Si/Ag diodes
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DOI: 10.1007/s12034-018-1713-0
Abstract: Abstract$$\hbox {Cu}_{{2}}\hbox {ZnSnTe}_{4}$$Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation… read more here.
Keywords: barrier height; hbox znsnte; hbox hbox; temperature ... See more keywords