A fully integrated GaAs HBT power amplifier for WLAN 802.11ax applications
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DOI: 10.1002/mop.70000
Abstract: A fully integrated gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) power amplifier (PA) for wireless local area network 802.11ax applications is presented in this paper. The structure consists of two‐stage power cells. To satisfy the… read more here.
Keywords: power; fully integrated; hbt; hbt power ... See more keywords