Analysis of self-heating-related instability in n-channel low-temperature polysilicon TFTs with different S/D contact hole densities
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DOI: 10.35848/1882-0786/ac4e25
Abstract: This study examines self-heating-related instability in n-channel low-temperature polysilicon thin-film transistors with different source/drain contact hole densities. Devices with more contact holes exhibit a higher on-current without additional parasitic capacitance, further enhancing the RC delay… read more here.
Keywords: heating related; instability channel; self heating; related instability ... See more keywords