Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4981891
Abstract: A metal-insulator-semiconductor (MIS) tunneling diode is a very promising sensor due to its deep depletion phenomenon. The coupling effect between two adjacent devices is therefore of importance. To study the MIS deep-depletion tunneling current coupling… read more here.
Keywords: schottky barrier; deep depletion; barrier height; mis ... See more keywords