Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-019-04322-5
Abstract: An analytical approach incorporating traps (donor type) in the AlGaN layer at the top and bottom heterointerface is proposed to determine threshold voltage (Vth), net sheet carrier concentration (ns) and drain current in Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double-heterostructure… read more here.
Keywords: heterostructure; hemt; al0 15ga0; 15ga0 85n ... See more keywords
Characterization of InP-based pseudomorphic HEMT with T-gate
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-019-04491-3
Abstract: This paper proposes two structures of InAlAs/InGaAs-based pseudomorphic high electron mobility transistor (PHEMT): one with rectangular-gate and another with T-gate. Both the proposed PHEMTs consist of an In 0.52 Al 0.48 As supply/barrier layer and… read more here.
Keywords: hemt; ingaas based; gate; rectangular gate ... See more keywords
Numerical Investigation of the Instability-Based Power Emission from an Ungated Plasmonic HEMT Using Complete Hydrodynamic Model
Sign Up to like & getrecommendations! Published in 2020 at "Plasmonics"
DOI: 10.1007/s11468-020-01173-z
Abstract: The full-wave analysis of the Dyakonov–Shur instability in an ungated short-channel high electron mobility transistor (HEMT) is investigated in this paper. This mechanism causes the emission of electromagnetic radiations by the device. The accurate analysis… read more here.
Keywords: hydrodynamic model; hemt; complete hydrodynamic; instability ... See more keywords
Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition
Sign Up to like & getrecommendations! Published in 2019 at "Physica B: Condensed Matter"
DOI: 10.1016/j.physb.2019.07.029
Abstract: Abstract We performed electron-spin-resonance (ESR) investigations of defects related to dangling bonds (DBs) around the insulator/semiconductor interface in Al2O3/AlGaN/GaN MIS-HEMT structures on Si. The Al2O3 layer was fabricated by atomic layer deposition, and we studied… read more here.
Keywords: algan gan; electron spin; hemt; al2o3 ... See more keywords
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.08.002
Abstract: Abstract In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at… read more here.
Keywords: gate; power; hemt; hemt algan ... See more keywords
New GaN based HEMT with Si 3 N 4 or un-doped region in the barrier for high power applications
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.04.019
Abstract: Abstract New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT)… read more here.
Keywords: drain current; breakdown voltage; power; hemt ... See more keywords
The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106843
Abstract: Abstract To improve the power and RF performance of the high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructure junction, in this paper, a sandwich structure consisting of gate field plate, SiN passivation layer, and… read more here.
Keywords: algan gan; field; sandwich structure; hemt ... See more keywords
Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106954
Abstract: Abstract The impact of graded Al0.05Ga0.95N sub-channel over the DC characteristics of AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) has been investigated here. By placing a field plate over the gate region and forming… read more here.
Keywords: algan gan; hemt; mos hemt; gan alinn ... See more keywords
Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4985057
Abstract: This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons… read more here.
Keywords: different trapping; trapping mechanisms; hemt; non monotonic ... See more keywords
Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high performance low voltage terminal applications
Sign Up to like & getrecommendations! Published in 2023 at "Chinese Physics B"
DOI: 10.1088/1674-1056/acd8a1
Abstract: In this work, improved RF power performance of InAlN/GaN HEMT is achieved by optimizing rapid thermal annealing (RTA) process for high performance low voltage terminal applications. By optimizing the RTA temperature and time, the optimal… read more here.
Keywords: hemt; improved power; voltage; high performance ... See more keywords
Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2018.2878243
Abstract: HEMT technology is being used for development of biosensors. Many floating gate HEMT-based biosensors have been experimentally developed but little work has been reported on modeling of MOSHEMT-based biosensors. Therefore in this paper an analytical… read more here.
Keywords: algan gan; hemt; cavity; biosensor ... See more keywords