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   Articles with "hemt" as a keyword



Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps

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recommendations! Published in 2019 at "Microsystem Technologies"

DOI: 10.1007/s00542-019-04322-5

Abstract: An analytical approach incorporating traps (donor type) in the AlGaN layer at the top and bottom heterointerface is proposed to determine threshold voltage (Vth), net sheet carrier concentration (ns) and drain current in Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double-heterostructure… read more here.

Keywords: heterostructure; hemt; al0 15ga0; 15ga0 85n ... See more keywords

Characterization of InP-based pseudomorphic HEMT with T-gate

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recommendations! Published in 2019 at "Microsystem Technologies"

DOI: 10.1007/s00542-019-04491-3

Abstract: This paper proposes two structures of InAlAs/InGaAs-based pseudomorphic high electron mobility transistor (PHEMT): one with rectangular-gate and another with T-gate. Both the proposed PHEMTs consist of an In 0.52 Al 0.48 As supply/barrier layer and… read more here.

Keywords: hemt; ingaas based; gate; rectangular gate ... See more keywords
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Numerical Investigation of the Instability-Based Power Emission from an Ungated Plasmonic HEMT Using Complete Hydrodynamic Model

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recommendations! Published in 2020 at "Plasmonics"

DOI: 10.1007/s11468-020-01173-z

Abstract: The full-wave analysis of the Dyakonov–Shur instability in an ungated short-channel high electron mobility transistor (HEMT) is investigated in this paper. This mechanism causes the emission of electromagnetic radiations by the device. The accurate analysis… read more here.

Keywords: hydrodynamic model; hemt; complete hydrodynamic; instability ... See more keywords

Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

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recommendations! Published in 2019 at "Physica B: Condensed Matter"

DOI: 10.1016/j.physb.2019.07.029

Abstract: Abstract We performed electron-spin-resonance (ESR) investigations of defects related to dangling bonds (DBs) around the insulator/semiconductor interface in Al2O3/AlGaN/GaN MIS-HEMT structures on Si. The Al2O3 layer was fabricated by atomic layer deposition, and we studied… read more here.

Keywords: algan gan; electron spin; hemt; al2o3 ... See more keywords

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

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recommendations! Published in 2017 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2017.08.002

Abstract: Abstract In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at… read more here.

Keywords: gate; power; hemt; hemt algan ... See more keywords

New GaN based HEMT with Si 3 N 4 or un-doped region in the barrier for high power applications

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recommendations! Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.04.019

Abstract: Abstract New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT)… read more here.

Keywords: drain current; breakdown voltage; power; hemt ... See more keywords

The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure

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recommendations! Published in 2021 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2021.106843

Abstract: Abstract To improve the power and RF performance of the high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructure junction, in this paper, a sandwich structure consisting of gate field plate, SiN passivation layer, and… read more here.

Keywords: algan gan; field; sandwich structure; hemt ... See more keywords

Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT

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recommendations! Published in 2021 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2021.106954

Abstract: Abstract The impact of graded Al0.05Ga0.95N sub-channel over the DC characteristics of AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) has been investigated here. By placing a field plate over the gate region and forming… read more here.

Keywords: algan gan; hemt; mos hemt; gan alinn ... See more keywords

Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

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recommendations! Published in 2017 at "AIP Advances"

DOI: 10.1063/1.4985057

Abstract: This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons… read more here.

Keywords: different trapping; trapping mechanisms; hemt; non monotonic ... See more keywords

Acoustic and optical plasmons excitation in double-channel AlGaN/GaN HEMT under asymmetric boundaries

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recommendations! Published in 2024 at "AIP Advances"

DOI: 10.1063/5.0196556

Abstract: We have simulatively studied the electrical excitation of acoustic and optical plasmons in double-channel AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries. By solving the self-consistent hydrodynamic model with Maxwell’s equations, it is found… read more here.

Keywords: double channel; hemt; optical plasmons; asymmetric boundaries ... See more keywords

Dual-Channel SiC-AlGaN/GaN HEMT with a Drain-Connected Field Plate for Improved Breakdown Voltage and Analog/RF Performance

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recommendations! Published in 2025 at "IETE Journal of Research"

DOI: 10.1080/03772063.2025.2461654

Abstract: In this paper, a modified version of AlGaN/GaN MOS-HEMT is presented by the incorporation of dual drain-connected field-plated architecture and a dual channel to achieve an enhancement in the electrical performance of AlGaN/GaN MOS-HEMT. The… read more here.

Keywords: hemt; field; algan gan; performance ... See more keywords