Enhancement of Sensing Performance of GaN-Based MOS-HEMT Biosensors by Graded AlGaN Barrier
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DOI: 10.1109/jsen.2024.3409708
Abstract: To improve the sensing performance, the GaN-based metal oxide semiconductor (MOS)-high-electron mobility transistor (HEMT) biosensor with graded AlGaN barrier was proposed and investigated by Silvaco TCAD. The simulation results indicate that the proposed device exhibits… read more here.
Keywords: algan barrier; gan based; hemt biosensors; graded algan ... See more keywords