Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device
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DOI: 10.1109/tpel.2020.3015211
Abstract: A normally-off SiC-JFET/GaN-HEMT cascode device is recently proposed, featuring a cascode configuration that incorporates a high-voltage (i.e., 1200 V) SiC junction field effect transistor (JFET) and a low-voltage GaN high electron mobility transistor (HEMT). This… read more here.
Keywords: italic control; control; italic italic; jfet ... See more keywords