A 220 GHz Reconfigurable Reflectarray Antenna Using GaN HEMT Device
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Terahertz Science and Technology"
DOI: 10.1109/tthz.2025.3563715
Abstract: Reconfigurable reflectarray antennas (RRAs) at submillimeter and terahertz frequencies are critical for communications and imaging applications. This article examines, fabricates, and measures an RRA integrated with a gallium nitride (GaN) high electron mobility transistor (HEMT)… read more here.
Keywords: hemt device; device; 220 ghz; gan hemt ... See more keywords
Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13030466
Abstract: In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side… read more here.
Keywords: thermoreflectance microscopy; gan hemt; hemt device; microscopy ... See more keywords