On-demand performance optimization of AlGaN/GaN high electron mobility transistors using stoichiometric variation of dielectric alloy AlxTayO
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0226707
Abstract: The current research investigates the potential advantages of optimally combining wide bandgap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. Various compositions of 10 nm AlxTayO oxide films are grown on the Al0.3Ga0.7N/GaN… read more here.
Keywords: gan high; 3ga0 gan; hemt devices; al0 3ga0 ... See more keywords
Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation
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DOI: 10.3390/ma15113818
Abstract: The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The… read more here.
Keywords: metal gate; hemt devices; structure; algan gan ... See more keywords
A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices
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DOI: 10.3390/mi15080993
Abstract: This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics… read more here.
Keywords: dynamic switching; hemt devices; test; characteristics gan ... See more keywords