New GaN based HEMT with Si 3 N 4 or un-doped region in the barrier for high power applications
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DOI: 10.1016/j.spmi.2018.04.019
Abstract: Abstract New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT)… read more here.
Keywords: drain current; breakdown voltage; power; hemt ... See more keywords