Effects of Electrochemical Etching on InP HEMT Fabrication
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DOI: 10.1109/tsm.2019.2940320
Abstract: Optimum device performance in terms of noise and gain of AlInAs/GaInAs/InP High Electron Mobility Transistors (HEMTs) requires minimizing the contact resistance ${R} _{C}$ . In several HEMT fabrication steps in device manufacturing it is common… read more here.
Keywords: hemt fabrication; etching inp; inp hemt; effects electrochemical ... See more keywords