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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2893302
Abstract: This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is based on…
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Keywords:
charge based;
based epfl;
epfl hemt;
model ... See more keywords