Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Physics B"
DOI: 10.1088/1674-1056/28/5/058501
Abstract: The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled Al-GaN/GaN… read more here.
Keywords: noise characteristics; hemt terahertz; responsivity noise; noise ... See more keywords
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2893640
Abstract: A recessed barrier layer (RBL) structure is proposed in themicrometer-sized AlGaN/GaN high-electron mobility transistor (HEMT) for terahertz applications. It is found by using numerical simulation that the properly designed RBL structure can trigger the formation… read more here.
Keywords: algan gan; barrier layer; hemt; hemt terahertz ... See more keywords