State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.09.028
Abstract: Abstract In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of… read more here.
Keywords: gan based; gate; hemts; mis hemts ... See more keywords
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acca9d
Abstract: Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems.… read more here.
Keywords: gan based; power high; mobility; power ... See more keywords
Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2723932
Abstract: Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to… read more here.
Keywords: alinn gan; mis hemts; gate leakage; hemts ... See more keywords
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2842205
Abstract: AlGaN/GaN high-electron mobility transistors (HEMTs) and metal–oxide–semiconductor (MOS)-HEMTs using HfO2 as a gate dielectric have been analyzed at room temperature, after short thermal annealing (STA) and thermal cycle tests, during off-state electrical step stress, high-temperature… read more here.
Keywords: mos hemts; algan gan; high electron; hemts ... See more keywords
Radiation Response of AlGaN-Channel HEMTs
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2885526
Abstract: We present heavy ion and proton data on AlGaN high-voltage HEMTs showing single event burnout (SEB), total ionizing dose, and displacement damage responses. These are the first such data for materials of this type. Two… read more here.
Keywords: tex math; inline formula; hemts; gate drain ... See more keywords
Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15020654
Abstract: In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part.… read more here.
Keywords: gate; hemts; modulation range; gan gate ... See more keywords
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14051042
Abstract: The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process… read more here.
Keywords: stress; effect gan; hemts; gan gate ... See more keywords