Analytical modeling of asymmetric hetero-dielectric engineered dual-material DG-TFET
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-1102-8
Abstract: The present work aims to incorporate the benefits of asymmetric hetero-dielectric engineering into the already popular dual-material double-gate tunnel field-effect transistor. Here, Poisson’s equation in 2D, incorporating appropriate boundary conditions, is solved to obtain the… read more here.
Keywords: dual material; hetero dielectric; asymmetric hetero; hetero ... See more keywords
Impact of Hetero-Dielectric Ferroelectric Gate Stack on Analog/RF Performance of Tunnel FET
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DOI: 10.1007/s11664-020-08315-3
Abstract: We have investigated the characteristics of a hetero-dielectric ferroelectric tunnel (HD-FeTFET). Extensive simulations show that using a hetero-dielectric gate architecture in the lateral direction (non-ferroelectric/ferroelectric/non-ferroelectric) results in more desirable analog/RF characteristics. The proposed structure is… read more here.
Keywords: tunnel; gate; structure; dielectric ferroelectric ... See more keywords
Ultrathin body nanowire hetero-dielectric stacked asymmetric halo doped junctionless accumulation mode MOSFET for enhanced electrical characteristics and negative bias stability
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.106364
Abstract: Abstract This paper presents a 2-D analytical model of ultrathin hetero dielectric, asymmetric halo doped graded channel (HDGC) nanowire junctionless accumulation mode (JAM) MOSFETs obtained by incorporating the concepts of gate-oxide engineering (i.e., hetero dielectric)… read more here.
Keywords: accumulation mode; asymmetric halo; hetero; halo doped ... See more keywords
An analytical 2-D model of triple metal double gate graded channel junctionless MOSFET with hetero-dielectric gate oxide stack
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DOI: 10.1016/j.ssc.2021.114521
Abstract: In this paper, a two-dimensional analytical model of a laterally graded-channel triplemetal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO2 and HfO2 is derived. The model illustrates higher drive… read more here.
Keywords: double gate; analytical model; gate; graded channel ... See more keywords