2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100074
Abstract: Among advanced devices with 2D semiconductors, charge injection memory field effect transistors (CIM FETs) may be one of the most important and practical ones. Reported CIM FETs utilize three layers (for tunneling, trapping, and bulk… read more here.
Keywords: hfo2; oxide interface; memory; hetero stack ... See more keywords