Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
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DOI: 10.1063/1.5006814
Abstract: Inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality,… read more here.
Keywords: heteroepitaxial gan; irradiation; carrier; diffusion length ... See more keywords