Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa8b2a
Abstract: Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice… read more here.
Keywords: optical properties; grown silicon; heteroepitaxially grown; low temperatures ... See more keywords
Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15020624
Abstract: This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al2O3 substrate. The growth of diamond follows the Volmer–Weber mode,… read more here.
Keywords: thickness impact; al2o3; impact morphology; heteroepitaxially grown ... See more keywords