Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection
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DOI: 10.3390/nano12234169
Abstract: The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs)… read more here.
Keywords: aln films; heteroepitaxy growth; quality aln; far ultraviolet ... See more keywords