2D Cu9 S5 /PtS2 /WSe2 Double Heterojunction Bipolar Transistor with High Current Gain.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202106537
Abstract: Bipolar junction transistor (BJT), one important circuit element in the integrated circuits, is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising… read more here.
Keywords: heterojunction bipolar; gain; current gain; injection efficiency ... See more keywords
AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Materials Chemistry C"
DOI: 10.1039/d3tc00317e
Abstract: The structure of the AlGaN-based solar-blind UV heterojunction bipolar phototransistor (HBPT) with an AlGaN-based multiple quantum wells (MQWs) layer as the light absorption layer is proposed in this paper. On... read more here.
Keywords: heterojunction bipolar; blind heterojunction; algan based; solar blind ... See more keywords
GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4974969
Abstract: Heterojunction bipolar transistors with GaAsxP1−x bases and collectors and InyGa1−yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1−x compositions were used, ranging… read more here.
Keywords: ingap; gaasp ingap; heterojunction bipolar; bipolar transistors ... See more keywords
MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aae247
Abstract: Heterojunction bipolar transistors (HBTs) with an In0.49Ga0.51P emitter and a GaAs base and collector were fabricated on epitaxial films grown directly onto Si substrates using a thin germanium (100%) buffer layer. All the materials (Ge,… read more here.
Keywords: integration; heterojunction bipolar; cmos; gaas ... See more keywords
Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and π-models up to 110 GHz
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab5917
Abstract: A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors (HBTs) is presented. This method combines the advantages of the conventional T- and π-type equivalent-circuit topologies. All the… read more here.
Keywords: parameter extraction; heterojunction bipolar; bipolar transistors;
Considerations for the Design of a Heterojunction Bipolar Transistor Solar Cell
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2019.2945914
Abstract: Independent current extraction in multijunction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multijunction… read more here.
Keywords: solar cell; cell; heterojunction bipolar; transistor ... See more keywords