Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202300035
Abstract: Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE‐LED) and organic OLED architectures as transport layers. Solution‐processed metal… read more here.
Keywords: zno heterojunction; metal oxide; printed nio; inkjet printed ... See more keywords
A remarkable effect of substrate temperature on novel Al/Y2O3/n-Si heterojunction diodes performance fabricated by facile jet nebulizer spray pyrolysis for optoelectronic applications
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Journal of Physics"
DOI: 10.1016/j.cjph.2021.06.031
Abstract: Abstract Herein, we present the development and characterization of Yttrium oxide (Y2O3) films and Al/Y2O3/n-Si heterojunction diodes at various substrate temperatures using a low-cost facile jet nebulizer spray pyrolysis (JNSP) technique. The X-ray powder diffraction… read more here.
Keywords: substrate temperature; heterojunction diodes; y2o3 heterojunction; facile jet ... See more keywords
SnO/β-Ga2O3 vertical pn heterojunction diodes
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DOI: 10.1063/5.0031442
Abstract: Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\beta$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$.… read more here.
Keywords: heterojunction diodes; voltage; vertical heterojunction; sno ga2o3 ... See more keywords
Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abfb87
Abstract: We form carbon-doped n-BaSi2(0.35 μm)/p-Si(111) heterojunction diodes by radio-frequency sputtering using BaSi2 and SiC targets, and demonstrate the solar cell operation for the first time under AM1.5 illumination. The electron trap level was measured to… read more here.
Keywords: heterojunction diodes; deep level; solar cell; level ... See more keywords