High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors
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DOI: 10.1007/s10854-019-02571-8
Abstract: We report the fabrication and characterization of the visible-blind AlGaN/GaN-based avalanche heterojunction phototransistors (AHPT) with a collector-up configuration. The fabricated devices with 150-μm-diameter active area exhibit low dark currents of less than 20 pA at… read more here.
Keywords: blind avalanche; heterojunction phototransistors; visible blind; avalanche ... See more keywords