An Accurate Analytical Surface Potential Model of Heterojunction Tunnel FET
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DOI: 10.1088/1674-1056/accd48
Abstract: In this paper, based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts for both the effects of… read more here.
Keywords: potential model; analytical surface; surface potential; model heterojunction ... See more keywords