Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH3 and Selective Deposition on Defects of Graphene
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DOI: 10.1021/acsomega.9b01003
Abstract: Atomic layer deposition (ALD) of Ni was demonstrated by introducing a novel oxygen-free heteroleptic Ni precursor, (η3-cyclohexenyl)(η5-cyclopentadienyl)nickel(II) [Ni(Chex)(Cp)]. For this process, non-oxygen-containing reactants (NH3 and H2 molecules) were used within a deposition temperature range of… read more here.
Keywords: microscopy; selective deposition; atomic layer; deposition ... See more keywords