Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.01.031
Abstract: Abstract Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution,… read more here.
Keywords: field; algan gan; effect; gan heterostructure ... See more keywords
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5037095
Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and… read more here.
Keywords: 2o3 ga2o3; alxga1 2o3; double heterostructure; heterostructure field ... See more keywords