Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
Sign Up to like & getrecommendations! Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa6051
Abstract: Epitaxial high-quality InAs/InSb axial heterostructure nanowires are of great interest due to their distinct advantages in fundamental research as well as applications in semiconductor electronic and quantum devices. Currently, nearly all the growth of InAs/InSb… read more here.
Keywords: heterostructure nanowires; insb axial; inas insb; growth ... See more keywords
A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac5b54
Abstract: Axial NiO/β-Ga2O3 heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of… read more here.
Keywords: axial nio; nio ga2o3; heterostructure nanowires; ga2o3 ... See more keywords
Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2018.2874271
Abstract: We report gold-free growth of vertically aligned InAs/GaSb heterostructure nanowires (NWs) on Si(111) substrate by metal organic chemical vapor deposition technique. The effect of growth temperature on morphology and growth rate for InAs and InAs/GaSb… read more here.
Keywords: gasb; heterostructure nanowires; inas gasb; gasb heterostructure ... See more keywords