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Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618040115
Abstract: Abstractn-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the…
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Keywords:
gasb;
heterostructure single;
inas gasb;
gasb heterostructure ... See more keywords