A Universal Analytical Potential Model for Double-Gate Heterostructure Tunnel FETs
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DOI: 10.1109/ted.2019.2895277
Abstract: In this paper, we develop an accurate analytical electrostatic potential model for both the n-type and p-type double-gate heterostructure tunnel field-effect transistors (H-TFETs). We solve the Poisson’s equation in four distinct regions inside the device,… read more here.
Keywords: gate heterostructure; potential model; model; double gate ... See more keywords