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Published in 2019 at "International Journal of Hydrogen Energy"
DOI: 10.1016/j.ijhydene.2019.06.207
Abstract: Abstract It is of high significance to design robust, low-cost and stable electrocatalysts for the oxygen evolution reaction (OER) under alkaline medium. In this communication, we present the exploitation of Ni3S2@Co(OH)2 which directly grown on…
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Keywords:
ni3s2 heterostructures;
efficient electrocatalyst;
electrocatalyst;
foam efficient ... See more keywords
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1
Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125881
Abstract: Abstract Different I n A s B i / b u f f e r - I n A s / G a A s ( 100 ) and I n A s / G…
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Keywords:
buffer layer;
heterostructures grown;
effect;
inas buffer ... See more keywords
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Published in 2022 at "ACS Applied Nano Materials"
DOI: 10.1021/acsanm.2c00940
Abstract: Designing heterostructure materials at the nanoscale is a well-known method to enhance gas sensing performance. In this study, a mixed solution of zinc chloride and tin (II) chloride dihydrate, dissolved in ethanol solvent, was used…
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Keywords:
microscopy;
zno;
zno sno2;
sno2 heterostructures ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0005484
Abstract: The integration of GaN on Si as large scale substrates still faces many hurdles. Besides the large difference in the lattice constant and the high thermal mismatch existing between GaN and Si, spiral hillock growth…
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Keywords:
heterostructures grown;
formation;
gan algan;
hillock ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0011685
Abstract: We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical gain resulting from the transistor-like operation of the device, a photocurrent as high…
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Keywords:
rejection ratio;
heterostructures grown;
algan gan;
ratio ... See more keywords
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Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618010153
Abstract: Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence spectra…
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Keywords:
heterostructures grown;
confined heterostructures;
4ga0 6as;
quantum confined ... See more keywords
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Published in 2023 at "Defect and Diffusion Forum"
DOI: 10.4028/p-188z42
Abstract: Indium gallium nitride / gallium nitride (InGaN/GaN) heterostructures were grown by using metal organic vapor deposition technique with four different growth temperatures (740 °C, 760 °C, 780 °C, and 800 °C). The structural properties and…
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Keywords:
ingan gan;
diffraction study;
rays diffraction;
gan heterostructures ... See more keywords