Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire
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DOI: 10.1016/j.spmi.2017.02.012
Abstract: Abstract A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical… read more here.
Keywords: polar gan; grown plane; hillock; residual stress ... See more keywords